Abstract

This paper demonstrates a silicon-germanium (SiGe) HBT power amplifier for time division synchronous code-division multiple-access (TD-SCDMA) application with a single positive 3.3V supply and fully integrated on-chip input and interstage matching network. For the code-division multiple-access environment, the power amplifier delivers 30dBm power output and provides power-added efficiency (PAE) of 34.8% and an adjacent channel power ratio (ACPR) less than -35 dBc at 28 dBm. The power amplifier includes dynamic control bias circuits and a fully integrated power detector

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