A SiGe Multiplier Array With Output Power of 5–8 dBm at 200–230 GHz

Abstract

This paper presents an integrated four-way power-combining multiplier for 200–230-GHz applications in an advanced 90-nm silicon germanium HBT technology. The active multiplier is implemented using balanced transistor pairs driven by pseudodifferential power amplifiers (PAs) at 100–120 GHz and the outputs at 200–240 GHz are power combined using reactive $\lambda $ /4 impedance transformation networks. A single multiplier breakout results in an output power of 1.8 dBm at 245 GHz with a peak conversion gain of −15.5 dB. The power-combining multiplier achieves an output power of 8 dBm at 215 GHz and >5 dBm at 200–230 GHz. A peak conversion gain of 1.6 dB is achieved at an output power of $\sim 0$ dBm at 215 GHz. The four-way combined multiplier occupies 3.63 mm2, including pads, and consumes 1.2 A from a 1.8 V supply mainly due to the differential 100–120-GHz PAs. To the best of our knowledge, this is the highest output power achieved in multipliers and amplifiers among all silicon-based technology to-date at frequencies above 200 GHz and with a record wide bandwidth.