Abstract
This paper presents a fully integrated 16-way power-combining amplifier for 67–92-GHz applications in an advanced 90-nm silicon germanium HBT technology. The 16-way amplifier is implemented using three-stage common-emitter single-ended power amplifiers (PAs) as building blocks, and reactive $\lambda $ /4 impedance transformation networks are used for power combining. The three-stage single PA breakout has a small-signal gain of 22 dB at 74 GHz, and saturation output power ( $P_{\mathrm{ sat}}$ ) of 14.3–16.4 dBm at 68–99 GHz. The power-combining PA achieves a small-signal gain of 19.3 dB at 74 GHz, and $P_{\mathrm{ sat}}$ of 25.3–27.3 dBm at 68–88 GHz with a maximum power added efficiency of 12.4%. The 16-way amplifier occupies 6.48 mm2 (including pads) and consumes a maximum current of 2.1 A from a 1.8 V supply. To the best of our knowledge, this is the highest power silicon-based $E$ -band amplifier to date.
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