Abstract
This study presents a 3.1–10.6GHz ultra-wideband low noise amplifier (UWB LNA) in 0.18µm SiGe HBT technology. To achieve a good input match, parasitic base resistance in a bipolar transistor and an LC-ladder filter are included into calculations with the common-emitter topology using shunt–shunt capacitive feedback. Both high and flat power gain (S21) and low and flat noise figure (NF) are achieved by adjusting the pole and zero in amplifying stage and quality factors of the fourth-order input network. Design equations for performances such as gain, noise figure and linearity IIP3 are derived especially on gain flatness and noise flatness. LNA dissipates 33mW power and achieves S21 of 20.65+0.7dB, NF of 2.79+0.2dB over the band of 3.1–10.6GHz. The simulated input third-order intermodulation point (IIP3) is −17dBm at 10GHz.
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