A CMOS 3–12-GHz Ultrawideband Low Noise Amplifier by Dual-Resonance Network

Abstract

A low-power and high power-gain ( $S_{21}$ ) ultrawideband low noise amplifier (UWB LNA) with flat noise figure (NF) based on Global Foundies 0.13- $\mu \text{m}$ CMOS technology is reported. The load effect of common-gate (CG) topology is applied with dual-resonance load network for both wideband input matching and NF flatness. Combined with inductive-series peaking technique, the frequency response of CG-common-source cascade topology is further extended. The LNA circuit achieves the high and flat power gain of 13.5 ± 1.5 dB with input return loss better than 13 dB and a flat NF of 4.3 dB ±0.4 dB for frequencies 3–12 GHz. The fabricated LNA occupies a die area of 1.09 0.8 mm2 including pads and draw 8.5 mW from 1.2-V dc supply.