Abstract
The floating-gate a-Si:H TFT is a low temperature prepared nonvolatile memory device that can be fabricated on a rigid or flexible substrate. Copper interconnect lines are necessarily for large-area flat panel displays and other electronics products. For flexible electronic applications, they are subject to mechanical bending. In this paper, the author reviewed recent progress on influences of mechanical bending on memory functions of the floating-gate a-Si:H TFT and the failure mode of the copper line etched with a new plasma-based etch process. Their corresponding characteristics on flat substrates were also investigated and compared.
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