Abstract
A multiplexer operating at up to 12 Gb/s has been demonstrated using a simple, but optimized, silicon bipolar technology with 2 mu m lithography. Using this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least 15 Gb/s by changing to the 1.5 mu m lithography. The results of experimental investigations and circuit simulations show that low-cost silicon-based bipolar circuits will be available for future optical-fiber transmission systems with data rates higher than 10 Gb/s.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.