Abstract
This paper presents an analytic $I$ – $V$ model for short-channel MOSFETs made of 2-D semiconductor material. First, a subthreshold current model is formulated based on the solutions to 2-D Poisson’s equation with negligible mobile charge. Next, a velocity saturation model is developed under the framework of a drift and diffusion long-channel model. These two models are then unified into an all region, short-channel $I$ – $V$ model with both drain induced barrier lowering and velocity saturation effects. Ballistic currents, including the intraband tunneling and the above-the-barrier transport, have been examined and compared with the thermionic currents.
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