Abstract
In this work we present the development of an equivalent series association analytical model for double gate (DG) Silicon-on-Insulator (SOI) nMOSFET transistor with graded-channel (GC) that is valid from weak inversion to strong inversion. Through the use of DG analytical models available in the literature, considering an equivalent structure represented by two transistors with different doping levels in series association, with short-circuited gates, each one simulating a GC channel region, we have got a model of the DG GC SOI nMOSFET. Atlas numerical two-dimensional simulations and experimental results are used to validate the proposed model. Good agreement between simulated, modelled and experimental results is found.
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