Abstract
Nitrogen dioxide (NO 2 ), as a common air contaminant, can cause human asthma and other respiratory diseases under a ppm-level atmosphere. Currently, most metal oxide semiconductors sensors usually work at a high temperature, which hinders its practical application. Therefore, to develop an efficient sensor with good stability and sensitivity is urgent for NO 2 detection at room temperature. Herein, we report a FA 0.83 Cs 0.17 PbI 3 (FACs)-based perovskite sensor via a simple one-step spin-coating method under ambient atmosphere. The FACs-based sensor exhibits a sensitive response to NO 2 gas, low detection limit of 0.14 ppm and good reversibility as well as selectivity. The response/recovery time for the detection of 10 ppm NO 2 is only 2/22 s, which surpasses the vast majority of sensors. Moreover, the FACs-based sensor also displays excellent stability. No morphological and structural changes occur, when FACs film is successively placed in a high-humidity air (50–60 %) without any encapsulations for three consecutive days. Benefitting from the superior response and stability, the FACs-based sensor in this work may open up a new avenue for high-performance sensor for the practical detection of NO 2 at room temperature. • Sensor is prepared via one-step spin-coating method in ambient atmosphere. • FACs-based sensor exhibits an excellent sensing performance to NO 2 gas at room temperature. • The response/recovery time for the detection of 10 ppm NO 2 is only 2/22 s at room temperature. • FACs-based sensor displays a superior stability in high humidity air without any encapsulation.
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