Abstract

The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4- mu m NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi/sub 2//polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Omega was obtained. >

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