Abstract
A photosensor was fabricated based on a lead sulfide (PbS)/porous silicon (Ps) heterojunction. An n-type Si(100) single crystal wafer was used to prepare the Ps using a photo-electrochemical etching method. A PbS nanocrystalline thin film was deposited onto the Ps substrate using a microwave-assisted chemical bath deposition (MA-CBD) technique. The current-voltage (I-V) characteristics of the fabricated PbS/Ps photosensor were studied under dark, 10 mW/cm2, 20 mW/cm2, and 40 mW/cm2 illumination by light. The device shows good response to light even without a bias voltage and the sensitivity when the applied voltage is 0 V decreased from 5.66 × 104 % under 10 mW/cm2 to 1.8 × 103 % when the device is illuminated by 40 mW/cm2 intensity light. The fabricated PbS/Ps photdetector shows a faster response to light of 0.43 sec when the applied voltage and intensity of light were 1.0 V and 40 mW/cm2, respectively. Moreover, the fastest fall time was 0.4 sec obtained for the device that was exposed to 40 mW/cm2 light and biased by 0.75 V.
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