Abstract
Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The current increases with light intensity. From the experimental results it can be concluded that lanthanum fluorides can be deposited on the PS surface by the CBD technique, which provides the required passivation for PS. This passivation can enable the PS to be considered as an important material for photonics.
Highlights
There has been increasing interest in semiconductor materials, which find applications in optoelectronic, photovoltaic industries and photo electrochemical solar cell devices
The effect of light intensity on I-V characteristics of LaF3 passivated porous silicon structure are shown in Figures 2, 3 and 4
From this research, it can be concluded that LaF3 can be efficiently deposited on porous silicon (PS) by the chemical bath deposition (CBD) technique
Summary
There has been increasing interest in semiconductor materials, which find applications in optoelectronic, photovoltaic industries and photo electrochemical solar cell devices Among these materials, LaF3 thin films appear to be promising candidates for many technological applications due to their stability, band gap energy (about 10.3eV) [1] transparency and photoconductor behavior. Porous silicon (PS) can be considered as a silicon (Si) crystal having a network of voids in it [3] This chemical conversation is slow and basically similar to the aging of Si wafer, i.e, a native oxide layer forms on the surface of the pores and the thickness of this oxide layer grows with time. Many passivation methods, such as anodic oxidation and rapid thermal oxidation, have been attempted to improve the stability, as well as efficiency, of PS. This article reports the influence of light intensity on the I-V characteristics of LaF3/PS structure.The I-V characteristics of
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