Abstract
A new method to determine source/drain series resistance has been developed for MOSFETs operated in linear region. The source/drain resistance ( R SD ) is gate-bias dependent. Channel length reduction (Δ L) is extracted at low gate bias and chosen to be constant. All parameters extracted in this method are assumed to be independent of mask channel length for model simplicity. The method has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 μm. The extracted parameters are consistent with the assumptions and have been validated by measured I– V characteristics.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
