Abstract
A new self‐aligned TFT structure that requires two photomasks is described in this paper. Three process steps, i.e., the backlight lithography, the top dielectric etch, and the n+ etch, have been studied in detail. The finished TFT has transfer characteristics and curves similar to those of a TFT prepared from a more complicated conventional process. TFT structure parameters, such as the channel length, the a‐Si:H thickness, the source/drain via size, and the contact resistance, affect the field effect mobility and the ratio. These relations were examined. Including a thin layer in the gate dielectric structure changes the device characteristics. The relation between the process and the device has been studied.
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