Abstract
A brief review of the current state of theoretical description of the formation of the defect structure of dislocation-free silicon single crystals was carried out. Emphasis was placed on a new diffusion model of formation grown-in microdefects. It is shown that the diffusion model can describe the high-temperature precipitation of impurities during the cooling of the crystal after growth. Shown that the model of the dynamics of point defects can be considered as component part of the diffusion model for formation grown-in microdefects.
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