Abstract
A second-order control volume finite element method combined with the multiscale flux approximation (CVFEM-MS) based on triangular elements is proposed to numerically investigate the self-heating effects of semiconductor devices. The multiscale fluxes are combined with a selected set of second-order vector basis functions to stabilize the discretization of carrier continuity equations with respect to triangular elements. Numerical results reveal that the proposed method is robust and accurate, even on the mesh of low-quality, where the detrimental impacts caused by the severe self-heating on the terminal currents can be obviously observed for a bipolar transistor model.
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