A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs)

Abstract

AbstractThis article presents a Schrödinger–Poisson based technique to predict characteristics of trigate Si fin field effect transistors (FinFETs). The channel characteristics are modeled by a three‐dimensional (3D) Schrödinger wave equation considering quantum‐mechanical ballistic transport. Using a nonequilibrium green function and a 3D Poisson equation, drain current associated with source‐drain Fermi energy difference is evaluated. Contact resistance and its impact on the drain current is adjusted using a modeled parameter in Fermi‐Dirac distribution function. It is observed that the drain current as a function of drain bias saturates because of the finite carrier supply from the source electrode. The model is calibrated using TCAD simulations for quantum transport. To validate the proposed model, output and transfer characteristics of nanoscale FinFETs are compared with experimental data and a good degree of accuracy is observed. It has been demonstrated that the proposed model has the ability to predict FinFETs characteristics having .