Abstract
The chemical compositions of two types of protective oxide films on single crystal GaP have been studied by Rutherford backscattering (2 MeV He +) combined with ion channeling. Films of 350–1400 Å thickness were grown by immersing GaP slices in hydrogen peroxide, with or without externally applied anodic bias. Films grown by a galvanic coupling process have compositions of about 1:1·1:4·5 (Ga:P:O) and are believed to be vitreous mixtures of Ga 2O 3+P 2O 5. Films grown with anodic bias exhibited a deficiency of Ga in a ∼200 Å region at the GaP-oxide interface.
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