Abstract
The (1 1 2) surfaces of Bridgman-grown p- and n-type CuInSe2 single crystals were prepared using different polishing, etching and annealing regimes. The surfaces were subsequently studied using Rutherford backscattering-channelling (2 MeV He+ ions) and Raman techniques. A layer of damage below the polished surface was produced after polishing with 3 Μm and 1 Μm diamond pastes and fine 0.05 Μm alumina slurry. The thickness of the damaged layer depends on the polishing grade and was found to be 30 nm after 0.05 Μm grade polishing. Subsequent etching in a 1% Br-methanol solution removed the damaged layer after 30s. However, the etching process produced what appeared to be an Se excess in a layer close to the surface. This excess can be dissipated by annealing; also, heat treatment of unetched samples at 400 ‡C was found to repair polish-induced damage.
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