Abstract
Recent evidence establishes a metallic conduction mechanism in ruthenium dioxide, RuO2. An experimental investigation determined that a Schottky barrier was formed at a ruthenium dioxide/semiconductor interface. A photovoltaic device has been fabricated by rf reactive sputtering of ruthenium dioxide on an etched single-crystal cadmium sulphide, Cds, surface. Its photovoltaic characteristics are reported. The structure may also have applications in photoelectrochemistry.
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