Abstract

The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 funded project called HighLite. For all layers, dark saturation current-densities ranging between 2 and 10 fA/cm2 can be reported. Simultaneously, no metal induced recombination for the two lower sintering temperatures have been observed pointing towards a true passivated contact. Furthermore, contact resistivities below 10 mΩcm2 have been achieved. It seems that the industrial passivating contact matured to a fully passivated and conducting contact enabling full efficiency potential. The fact that this can be realized using either PECVD or LPCVD from various manufacturer is expected to drive costs down and contribute to the increased adoption of the TOPCon technology.

Highlights

  • The poly-Si based surface passivation using a thin tunnel oxide known as “TOPCon” [1] or “POLO” [2] is subjected to an increasing interest from the industry

  • The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, Institute for Solar Energy Research Hamelin (ISFH), Interuniversitair Micro-Electronica Centrum vzw (IMEC) and Fraunhofer ISE within the H2020 funded project called HighLite

  • The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin in the leading European PV institutes EPFL, ISC, CEAINES, ISFH, IMEC and Fraunhofer ISE within the H2020 funded project called HighLite

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Summary

Introduction

The poly-Si based surface passivation using a thin tunnel oxide known as “TOPCon” [1] or “POLO” [2] (for simplicity, in the following only the expression “TOPCon” is used) is subjected to an increasing interest from the industry. In the last years, increasing conversion efficiencies were reported ending so far in record values of 24.6% reached by Trinasolar [3] and recently of 25.25% reported by Jinkosolar both in lab scale production. The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin in the leading European PV institutes EPFL, ISC, CEAINES, ISFH, IMEC and Fraunhofer ISE within the H2020 funded project called HighLite. Deposition tools from various companies using plasma enhanced chemical vapour deposition PECVD and low-pressure chemical vapour deposition LPCVD were used. N-type Cz-Si wafers were saw damage etched by ISC

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