Optimization of activated phosphorus concentration in recrystallized polysilicon layers for the n-TOPCon solar cell application

Abstract

The pivotal structure of n-TOPCon (tunnel oxide passivating contact) solar cells is the passivating contact structure composed of a heavily doped polysilicon (poly-Si) layer and an ultrathin silicon oxide (SiOx), which can provide excellent selectively carrier transport. The activated phosphorus concentration in the passivating contact structure plays a crucial role in the passivation quality and contact resistivity performance. By adjusting PH3 flow rate, SiOx thickness and activation temperature, three different activated phosphorus concentrations in poly-Si were achieved in this work, the phosphorus concentration from SiOx to silicon bulk decreased at the same rate. It can be found that the passivation quality decreases with increasing concentration and the contact resistivity decreases significantly. With the aid of ellipsometry, we successfully extracted the refractive index n and extinction coefficient k of three poly-Si with different activated phosphorus concentrations. The extracted n and k values can well feedback the influence of concentration change on short-circuit current density in the simulation. Due to the high concentration led to the decrease of the open circuit voltage and short circuit current of the final TOPCon solar cell, but the obvious filling factor benefit can be obtained, only moderate doping concentration can obtain the best efficiency performance. Finally, the activated phosphorus concentration of about 3 × 1020 cm−1 can obtain the best efficiency, >24.8% on average.