Abstract
The reason why “edge” dislocations can act as persistent growth sources on Si and GaAs surfaces is thought to be due to the absence of surface reconstruction at a dislocation outcrop. This locally creates a rough surface area where the nucleation rate and growth rate are much higher than on the surrounding surface. In this way a growth hill will develop. When the hill is large enough and stretches beyond the influence sphere of the stress field of the dislocation, its rim will be subject again to reconstruction generating in this way new steps. This mechanism will be especially operative on {001} surfaces of Si and GaAs, although a similar mechanism might also be present on the {111} and {110} faces of these and other crystals belonging to the zincblende structure.
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