Abstract
In this study, we prepared Rb-doped ZnO/In2O3 n-n nano-heterojunction, which functioned as highly responsive gas sensors for NO2 at room temperature. The experiments demonstrated a significant enhancement in the gas-sensing capabilities for low concentrations of NO2 at room temperature. ZnO/In2O3 NO2 gas sensors were synthesized with varying concentrations of Rb-doped using a two-step method. Gas-sensing experiments showed that the sensor with 6 mol% Rb-doped exhibited excellent selectivity and remarkable response values to NO2. At a NO2 concentration of 1 ppm, the response value was ten times greater than that of the undoped ZnO/In2O3 sensor, reaching a value as high as 119.5. This exceptional NO2 detection performance can be attributed to several factors. The presence of Rb-doped increased the concentration of oxygen vacancies on the material's surface, leading to a 14 % increase in adsorbed oxygen content compared to the undoped material. Additionally, Rb-doped resulted in a thicker depletion layer on the material's surface, which enhanced charge-transfer density. The band gap of Rb-doped ZnO/In2O3 decreased by 0.21 eV compared to the undoped ZnO/In2O3, enhancing the electron-leaping capability. The combined effects of these sensitization phenomena resulted in a significant improvement in the NO2 detection performance of the Rb-doped ZnO/In2O3 gas sensor.
Published Version
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