Abstract
AbstractAn improved pad‐deembedding technique for InGaP/GaAs HBT reducing uncertainty in measurement and equivalent circuit is proposed. Intrinsic elements are obtained by iteratively determining the external and internal base resistance. The extracted equivalent circuits demonstrate good agreement with the measured S‐parameters obtained from 45 MHz to 40 GHz for different sizes of HBTs. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1845–1848, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22573
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