Abstract

Multi-threshold CMOS is a very effective technique for reducing standby leakage power during long periods of inactivity. Recently, a power-gating scheme was presented to support multiple power-off modes and reduce the leakage power during short periods of inactivity. However, this scheme suffers from high sensitivity to process variations, which impedes manufacturability and also limits its applicability to at most two intermediate power-off modes. We propose a new power-gating technique that is tolerant to process variations and scalable to more than two intermediate power-off modes. In addition, the proposed design requires minimum design effort and offers greater power reduction and smaller area cost than the previous method. Analysis and extensive simulation results demonstrate the effectiveness of the proposed design.

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