Abstract
The family of photodetectors plays an important role in multiple applications. Extensive research and continuous development of photodetectors has enriched their functionalities and improved their performances. The silicon‐on‐insulator (SOI) technology extends the concepts and merits of photodetectors. Herein, the recent progress of the SOI‐based photodetectors is reviewed from the viewpoint of operation principles and performances. Silicon and Germanium photodiodes with conventional PIN structure are discussed first. Photodetectors with novel operating mechanism and high internal gain are then presented: avalanche photodiode on SOI, innovative photo‐Z 2‐field effect transistor (FET), and devices based on interface coupling. Superior functionalities, such as wavelength detection, dynamically tunable responsivity and response spectrum, are demonstrated. At last, the technology of active pixel sensors on SOI is reviewed.
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