A review on real time physical measurement techniques and their attempt to predict wear-out status of IGBT

Pramod Ghimire,Szymon Beczkowski,Stig Munk-Nielsen,Bjorn Rannestad,Paul Bach Thogersen

doi:10.1109/epe.2013.6634419

Abstract

Insulated Gate Bipolar Transistors (IGBTs) are key component in power converters. Reliability of power converters depend on wear-out process of power modules. A physical parameter such as the on-state collector-emitter voltage (V ce ) shows the status of degradation of the IGBT after a certain cycles of operation. However, the V ce mainly shows the wear-out of bond wire lift-off and solder degradation. The V ce is normally used to estimate the junction temperature in the module. The measurement of V ce is sensitive to the converter power level and fluctuations in the surrounding temperature. In spite of difficulties in the measurement, the offline and online V ce measurement topologies are implemented to study the reliability of the power converters. This paper presents a review in wear-out prediction methods of IGBT power modules and freewheeling diodes based on the real time V ce measurement. The measurement quality and some practical issues of those measurement techniques are discussed. Furthermore, the paper proposes the requirements for the measurement and prognostic approach to determine wear-out status of power modules in field applications. The online V ce measurement for a selected topology is also shown in the paper.

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