Abstract
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.
Highlights
The information technology revolution is driven by the continuous improvement of electronic devices and their constant scaling down
We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors available, and (iii) different types of promoters that favour the growth of two-dimensional layers
The basic concept of Chemical vapour deposition (CVD) is very simple, and it is schematically presented in Figure 1a: the precursors—either only S or both S and Mo compounds—are delivered in gaseous form to a substrate kept at high temperature, where the chemical reactions needed for the deposition of MoS2 occur
Summary
The information technology revolution is driven by the continuous improvement of electronic devices and their constant scaling down. First reports indicated the possibility of incorporating Mn in MoS2 , but with some issues relative to the substrate used, as Mn was detected only in structures deposited on graphene and not on those deposited on SiO2 /Si [23] Despite their peculiar properties and the achievements so far obtained, the controllable synthesis of large-area flakes and the reproducibility of the process are still challenging issues; these are two essential, key factors required to sustain the future development of 2D materials. A reliable growth protocol that can be transferred to different reactors with minimal setup time is a strong requirement to allow 2D MoS2 to make the jump to mass production The preparation of this material is still challenging, and there is a lot of room for improving both the process and the material quality. The aim of this work was to collect and critically present the knowledge acquired so far in this field, providing the reader with a comprehensive review of the state of the art of the CVD growth processes used to prepare MoS2
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