Abstract
Recent progress in the use of low-energy (⪅200 eV) ion/surface interactions and photo-induced reactions during vapor-phase crystal growth in order to provide better control over film growth kinetics and hence the microstructure, microchemistry, and physical properties of as-deposited layers is reviewed. Ion/surface interaction effects such as trapping, preferential sputtering, and collisional mixing are used to interpret and, in some cases, model experimental results concerning the effects of low-energy ion bombardment on nucleation and film growth kinetics, elemental incorporation probabilities, surface segregation rates, dopant depth distributions, and film microstructure. The role of photo-stimulated gas-phase and surface reactions during laser-assisted chemical vapor deposition including single, multiple, and multi-photon-initiated-processes, radical production,and adlayer photochemistry are also discussed together with newly developed laser-processing techniques during deposition. The focus of this review is on the development of an understanding of the controlling mechanisms in both ion/surface and photo-stimulated processes in order to more fully utilize the advantages inherent in these techniques.
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