Abstract
In this paper, we propose for the first time an attractive Si 3 N 4 /laminated Al 2 O 3 -HfO 2 (LAHO) stack metal- insulator-metal (MIM) capacitor with a low-leakage characteristic, good voltage linearity, high capacitance density, and excellent time-dependent dielectric breakdown (TDDB) reliability. The capacitor demonstrates a capacitance density of 4.2 fF/μm 2 , quadratic voltage coefficients (α) of 106 ppm/V 2 , and 18.92-year TDDB lifetime under a stressing voltage of 6.6 V. For the extended performance, it is projected that such a capacitor can possess a maximum capacitance density of 4.13 fF/μm 2 with α ≤ 100 ppm/V 2 and TDDB lifetime of 10 years under an analog operation of 7 V. Furthermore, this paper shows that α and TDDB lifetime of the new capacitor are very sensitive to the thickness of the Si 3 N 4 film. Comparison of the new MIM capacitors with the SiO 2 /HfO 2 stack MIM capacitors shows that the SiO 2 /HfO 2 capacitor is more suitable for low-voltage applications, whereas the new Si 3 N 4 /LAHO capacitor is superior for operations requiring a higher biasing condition.
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