Abstract
Insulated gate field effect integrated circuits are economically attractive because of the number of functions possible per unit area and the relative simplicity of design and processing. In many applications, insulated gate field effect transistors (IGFET) with low (∼1 volt) and stable threshold voltages are required. Prior experience with conventional beam-lead technology (1) (platinum-silicide, titaniam, platinum, gold) in bipolar devices has demonstrated its high reliability. Expected high reliability combined with the economic advantages in mechanical handling, bonding, and compatibility with other technologies dictated the incorporation of beam-leads in IGFET circuits.
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