Abstract
A polycide process with silicided diffusions is presented. This allows simultaneous use of mutually different silicides on the gate electrode and on the respective source and drain areas. The novel technique was used to fabricate MOSFETs and gate electrodes and self‐aligned on source/drain regions. Respective sheet resistivities were 5 and 7–8 Ω/□ and no degradation effects were observed. A comparison with the more conventional salicide concept is made and several advantages are elucidated.
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