A Reconfigurable 2.4GHz Power Amplifier for Polar Transmitters in 28nm FD-SOI CMOS technology

Abstract

This paper presents a fully integrated Power Amplifier (PA) for Polar Transmitter architectures. The proposed PA consists of two digitally controlled multi-cell stages with a reconfigurable output matching network in order to achieve the maximum output power regardless of the load impedance. More specifically, the first stage provides the synthesis of Amplitude and Phase signals of the polar transmitter and the second stage produces the final output power. The overall performance of the designed PA, is validated through extensive simulations for all Process, Voltage and Temperature variations (PVT/corners variations). With a 1. 8V supply voltage, the PA achieves an output power range from -4.6 to 14.2 dBm at 2. 4GHz. The design is performed in a 28nm Fully Depleted Silicon-On-Insulator (FD- SOI) CMOS technology and is suitable for 2. 4GHz applications.