A Recessed-channel Tunnel Field-Effect Transistor (RTFET) with the Asymmetric Source and Drain

Abstract

Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, short-channel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computer-aided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ~446× higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.