Abstract
The charge carrier mobility in perovskites is known to be affected by temperature. However, at low temperatures the perovskite film bears interfacial strains by deformation between the film and its substrate with difference coefficients of thermal expansion. Herein we provide a more realistic temperature-dependent carrier dynamics model involving both interfacial strain effect and intrinsic optoelectronic properties. The interfacial strain of a MAPbI3 film is confirmed through in-situ temperature-dependent X-ray diffractions. The carrier dynamics at different temperatures are unraveled using carrier dynamics fittings to time-resolved photoluminescence decays. An abnormal drop in carrier mobility is revealed with continuously decreasing temperature. The strain affects the trap density in films thus declines the carrier mobility at low temperatures. The carrier losses at the buried surface become significant at low temperatures due to the interfacial strain. This work provides a reminder that substrates should be carefully considered in temperature-related applications of perovskites.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
