Abstract
To mitigate the total ionizing dose (TID) effects of the dual-direction silicon-controlled rectifier, based on laterally diffused metal–oxide–semiconductor (LDMOS-DDSCR), a common-centroid layout arrangement with multiple octagonal units is proposed and fabricated in an 18-V Bipolar-CMOS-DMOS process. The symmetrical characteristics of the bidirectional electrostatic discharge (ESD) protection are verified by transmission line pulse tests. Gamma-ray irradiation experiments demonstrate that the proposed device is tolerant of TID effects up to 100 krad(Si), whereas the traditional finger-type LDMOS-DDSCR loses its function at 50 krad(Si). Finally, the ESD performance is also characterized at high temperatures which confirms that the proposed device is an excellent candidate for space applications.
Highlights
L ATERALLY diffused metal–oxide–semiconductor (LDMOS) has been widely used as power switching and high-voltage interface devices in space and military electronic systems [1], [2]
The cross-sectional view of the traditional LDMOS-Dual-direction silicon-controlled rectifier (DDSCR) is shown in Fig. 1(a), which is vulnerable to total ionizing dose (TID) effects
The finger, octagonal, and multiple-octagonal-type LDMOS-DDSCR devices mentioned above are fabricated in a 0.5-μm 18-V BCD process, which is composed of one polysilicon and two metal layers (1P2M)
Summary
L ATERALLY diffused metal–oxide–semiconductor (LDMOS) has been widely used as power switching and high-voltage interface devices in space and military electronic systems [1], [2]. LDMOS-based ESD devices are vulnerable to radiation effects in the extreme environment, leading to serious reliability issues. It is reported that LDMOS devices are sensitive to TID effects due to the thick gate oxide, which is designed to withstand high-voltage stress [13]. Apart from radiation effects, for the ESD devices, the impact of temperature effects should not be neglected too It is because the integrated circuits for space applications need to meet the requirement of military temperature ranges to ensure their reliability [23].
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