TLP measurement and analysis of graphene NEMS switches for on-chip ESD protection

Qi Chen,Albert Wang,Ya-Hong Xie,Chenkun Wang,Fei Lu,Jimmy Ng,Feilong Zhang,Cheng Li

doi:10.1109/nems.2017.8017044

TLP measurement and analysis of graphene NEMS switches for on-chip ESD protection

Qi Chen, Albert Wang + Show 6 more

https://doi.org/10.1109/nems.2017.8017044

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Publication Date: Apr 1, 2017

Citations: 8

Affiliation: University of California, Riverside, University of California, Los Angeles

#Electrostatic Discharging Protection #Electrostatic Discharging + Show 8 more

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Abstract

Compact and robust electrostatic discharging (ESD) protection structures are critical to on-chip ESD protection for ICs. Conventional in-Si ESD protection structures have many disadvantages. A new above-IC graphene NEMS (gNEMS) switch is reported as an ESD protection structure, which features almost zero leakage and robust ESD protection. A systematic characterization of gNEMS ESD structures was conducted by transient transmission line pulse (TLP) testing. The statistical analysis reveals the relationship between ESD discharging behaviors and the influences of gNEMS device dimensions and TLP testing conditions on ESD discharging.

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