Abstract
It is shown that irradiation of either n or p type gallium phosphide by 2 MeV electrons at 300 K reduces the concentration of boron initially present on gallium lattice sites. Local mode absorption bands due to a defect centre involving a single boron atom have been observed at 849 (11B) and 882 (10B) cm-1. It is thought that the boron atom occupies an interstitial site in these defects.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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