Abstract
Gate current plays a critical role in the maximum gate voltage swing, the maximum transconductance, and as a direct consequence, the maximum noise margin of digital devices. A quantum gate current model based on a charge-control analysis and the WKB approximation is presented for heterostructure field effect transistors (HFETs). Both the tunneling and thermionic emission gate currents are included and treated in a unified way in this model. Along with the general model itself, a specific calculation on a semiconductor insulator semiconductor (SISFET) is presented. The model shows that for advanced HFETs with thin hetero-barrier layers, the tunneling component dominates over the thermionic component and essentially constitutes the gate current. >
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