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Abstract
We have quantitatively investigated the suppression effect for the oxygen contamination into the InN layers by simultaneous irradiation of Ga beam during RF-MOMBE growth using the combination of the TMIn and the RF-plasma nitrogen sources. The O/C ratio and residual carrier concentrations decreased with increase in the Ga beam flux, and a linear relation was observed between O/C ratio and residual carrier concentrations. Present results strongly indicate that the origin of residual carrier concentrations is the incorporated oxygen atoms into the InN layers during growth.
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