Origins of n‐type residual carriers in RF‐MOMBE grown InN layers

Abstract

AbstractWe have investigated quantitatively on the origins of residual electrons in InN layers to make clear some roles of oxygen incorporation for band‐gap widening. It has been found out that a linear relation was observed between oxygen and residual electron concentrations for InN layers grown by RF‐MOMBE using TMIn source, although the residual electron concentration is super‐linearly dependent on oxygen concentration for InN layers grown by RF‐MBE using metal In source. The experimental results strongly indicate that oxygen atoms and/or nitrogen vacancies induced by oxygen incorporation are major origins of the residual carrier concentrations. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)