Abstract
The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs∕GaAs triple quantum wells grown by chemical beam epitaxy are studied in detail by photoluminescence (PL) spectroscopy at 77K. Special emphasis is put on the RTA-induced PL peak blueshift. It is found that the blueshift is neither due to nitrogen diffusion from well layer to barrier layer nor due to homogenization of nitrogen composition fluctuations. The blueshift is due to the coupling between the radiative recombination of PL emission and the nonradiative recombination of nonradiative centers. A quantitative model is proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. This model quantitatively explains not only our present results but also previous observations.
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