Abstract
GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
