Abstract
We propose an extension to the technique of fluctuation electron microscopy thatquantitatively measures a medium-range order correlation length in amorphousmaterials. In both simulated images from computer-generated paracrystallineamorphous silicon models and experimental images of amorphous silicon, we findthat the spatial autocorrelation function of dark-field transmission electronmicrographs of amorphous materials exhibits a simple exponential decay. Thedecay length measures a nanometre-scale structural correlation length inthe sample, although it also depends on the microscope resolution. Wealso propose a new interpretation of the fluctuation microscopy imagevariance in terms of fluctuations in local atomic pair distribution functions.
Published Version
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