A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network

Abstract

This letter has demonstrated a light emitting diode (LED) with a pure 1.5 μm emission using a metal-oxide-silicon (MOS) tunneling structure based on dislocation network in direct silicon bond wafer. It is found that under negative gate bias, the electrons in the metal gate electrode tunnel through the thin oxide to silicon and then recombine radiatively with holes at the dislocation related states to emit the D1-line with a wavelength of 1.5 μm. The calculation of energy band diagram indicates that a potential well for electrons forms at the charged bonding interface under negative bias, therefore, the electrons tunneled from the gate can rapidly be attracted by the electric field and then confined at the interface, which essentially increases the efficiency of D1 luminescence from MOS tunneling LED. These results are of interest for the development of silicon based photonics with 1.5 μm light emission.