A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

Abstract

This work investigates a pseudo‐junction barrier Schottky (pseudo‐JBS) diode that is created by placing an AlGaN/GaN Schottky diode in parallel with a p‐GaN junction on the same epitaxial p‐GaN gate AlGaN/GaN high electron mobility transistor (HEMT) wafer. This pseudo‐JBS diode employs the two‐dimentional electron gas to increase the operation current, thus reducing the on‐resistance with high blocking voltage. The fabricated pseudo‐JBS diode with anode‐to‐cathode lengths (LAC) of 10 μm shows a turn‐on voltage of 1.05 V, a minimum specific on‐resistance (RON,MIN) of 2.53 mΩ cm2, and blocking voltage of 1112 V yielding an excellent Baliga's figure of merit of 488.7 MW cm−2 on the same epitaxial p‐GaN/AlGaN/GaN HEMT wafer. This study provides a promising substitute for Schottky barrier diodes without requiring extra p‐GaN layer design.