Abstract
In this letter, we fabricate a high breakdown voltage (BV) lateral double-channel AlGaN/GaN Schottky barrier diode (SBD) with one grading-AlGaN channel barrier and p-GaN termination. The novel SBD shows a high BV of 2.2 kV and Baliga's figure of merit (BFOM) of 1.5 GW/cm2. A p-GaN termination can alleviate the electric field crowding in the anode region and add a new current conduction path. Furthermore, the length of GaN (LP) affects the reverse performance of SBD but have little influence on on-resistance (3.44 ± 0.2 mΩ cm2). However, this SBD has a high turn-on voltage (Von = 0.94 ± 0.3 V) because of damage in the multi-etching process. The BFOM of novel SBD are 1.54, 1.51, 0.95, and 0.62 GW/cm2 when LP equals 6 μm, 10 μm, 15 μm, and 20 μm respectively.
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