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Abstract
The paper presents an improved model of Silicon Optical Electronic Integrated Circuit (SOIC). The objective is to improve our OEIC model i.e. OEIC Circuit with Two Metal Layer Silicon Waveguide and Low Power Photonic Receiver Circuit by increasing responsitivity by increasing the quantum efficiency without changing the basic approach. This can be done by using optically controlled silicon MESFET also called OPFET. We also introduced the transparent indium tin oxide gate which when combines with MESFET, acts as a pre-amplifier in OEIC. The optically controlled silicon MESFET is integrated here having improved responsitivity, low gate to source capacitance, less signal delay, reduced noise and increased quantum efficiency.
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